Oxidation of silicon: the VLSI gate dielectric
نویسندگان
چکیده
منابع مشابه
I Oxidation of silicon : the VLSI gate I dielectric ?
Silicon dominates the semiconductor industry for good reasons. One factor is the stable, easily formed, insulating oxide, which aids high performance and allows practical processing. How well can these virtues survive as new demands are made on integrity, on smallness of feature sizes and other dimensions, and on constraints on processing and manufacturing methods? These demands make it critica...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1995
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/10/3/001